CHA3666
RoHS COMPLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3666 is a two-stage self biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
VD1
VD2
RFin
RFout
UMS
P1
P2
N2
Main Features
■
Broadband performance 6-17GHz
■
1.8dB noise figure
■
26dBm 3
rd
order intercept point
■
17dBm power at 1dB compression
■
21dB gain
■
Low DC power consumption
24,0
22,0
20,0
18,0
16,0
14,0
12,0
10,0
8,0
6,0
4,0
2,0
0,0
4,00
6,00
8,00
10,00
12,00
14,00
16,00
18,00
Gain
NF
Main Characteristics
Temp = +25° Vd1=Vd2= +4V Pads: P1, N2=GND
C,
Symbol
NF
G
IP3
Noise figure
Gain
3rd order intercept point
19
Parameter
Min
Typ
1.8
21
26
Max
2
Unit
dB
dB
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-8108 - 17 Apr 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09