CHA3666
RoHS COMPLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
D1
D2
The CHA3666 is a two-stage self biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
RFout
RFin
UMS
P1
P2 N2
Main Features
24,0
22,0
20,0
18,0
16,0
14,0
12,0
10,0
8,0
■ Broadband performance 6-17GHz
■ 1.8dB noise figure
■ 26dBm 3rd order intercept point
■ 17dBm power at 1dB compression
■ 21dB gain
Gain
■ Low DC power consumption
NF
6,0
4,0
2,0
0,0
4,00
6,00
8,00
10,00
12,00
14,00
16,00
18,00
Main Characteristics
Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND
Symbol
NF
Parameter
Min
Typ
Max
Unit
dB
Noise figure
Gain
1.8
21
26
2
G
19
dB
IP3
3rd order intercept point
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA36666159 - 08 Jun 06
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
