CHA3656-QAG
5.8-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3656-QAG is a two-stage self-
biased wide band monolithic low noise
amplifier.
UMS
A3656
It is designed for
a
wide range of
applications, from military to commercial
communication systems.
YYWW
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
Gain & Noise figure (dB)
Main Features
28
26
24
22
20
18
16
14
12
10
8
■ Broadband performances: 5.8- 17GHz
■ 1.7dB noise figure
■ 24dBm 3rd order intercept point
■ 14dBm power at 1dB compression
■ 20dB gain
Gain
NF
■ Low DC power consumption
■ 16L-QFN3X3 SMD package
6
4
2
0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
Parameter
Min
5.8
18
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
17.0
Gain
NF
20.0
1.7
Noise Figure
2
dB
P1dB
Output Power @1dB comp.
13.0
14.0
dBm
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
