CHA3565-QAG
5-21GHz Driver Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +5.0V
Symbol
Freq
Parameter
Min
5
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
21
Gain
12.5
17.5
19
15
Pout-1dB Output Power @1dB gain compression
19.5
20.5
dBm
dBm
Psat
C/I3
Saturated Output Power
C/I3 @ Pin/tone = -8dBm , Vd = 5V
5.0 to 7.5GHz
40
34
33
-8
dBc
dBc
dBc
dB
7.5 to 16.5GHz
16.5 to 20GHz
dBS11
dBS22
NF
Input Return Loss
Output Return Loss
Noise Figure
-6
-8
-10
6
dB
dB
Vd
Drain supply voltage
Drain current
5
V
Id
120
mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
6.0
Unit
V
Vd
Id
Drain bias voltage
Drain bias current
Gate bias voltage
Gate bias current
175
mA
V
Vg
Ig
-2 to +0.4
+0.7
mA
Maximum negative gate drain Voltage (Vd-Vg/2)
(an array of resistor divides gate voltage by 2)
Vgd
8
V
Pin
Tj
Maximum continuous input power
Junction temperature
+10
175
dBm
°C
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd
Pad No
Parameter
Values
+5.0
Unit
V
13
5
Drain voltage
Gate voltage
Vg
-1 to +0.4
V
Gate voltage is tuned to obtain 120mA drain current.
Vg can be either negative or positive supply bias.
Ref. : DSCHA3565-QAG3199 - 18 Jul 13
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
