5-21GHz Driver Amplifier
CHA3565-QAG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below than the maximum temperature specified (see the curve Pdiss. Max) in
order to guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA3565-QAG
Recommended max. junction temperature (Tj max)
Junction temperature absolute maximum rating
Max. continuous dissipated power (Pdiss. Max.)
:
:
:
166 °C
175 °C
0.6 W
=> Pdiss. Max. derating above Tcase(1)= 85
Junction-Case thermal resistance (Rth J-C)(2)
Minimum Tcase operating temperature(3)
°C
:
:
:
7 mW/°C
<135 °C/W
-40 °C
Maximum Tcase operating temperature(3)
Minimum storage temperature
:
:
:
85 °C
-55 °C
150 °C
Maximum storage temperature
(1) Derating at junction temperature constant = Tj max.
(2) Rth J-C is calculated for a worst case considering the hottest junction of the MMIC and all the devices biased.
(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
0.7
0.6
0.5
0.4
0.3
0.2
Tcase
Example: QFN 16L 3x3
Location of temperature
reference point(Tcase)
on package's bottom side
0.1
0
Pdiss. Max. @Tj <Tj max (W)
-50
-25
0
25
50
75
100
125
150
175
Tcase (°C)
6.4
Ref. : DSCHA3565-QAG3199 - 18 Jul 13
3/14
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
