6-18GHz Digital Variable Amplifier
CHA3513
Electrical Characteristics on wafer
Tamb = +25°C
Vd = Pads B, D, F = 4.5V, Vg = Pads A, C, E tuned for Id = 300mA
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
6
18
GHz
G
Small signal gain @ Attenuator state 0dB (1)
6-17GHz
17
15
19
16
5
dB
dB
dB
dB
dB
dB
dB
17-18GHz
ATT bit
Attenuator bit: State 5dB
State 10 dB 1
4.5
9.5
9.5
6.5
12
12
10
10
25
-35
State 10dB 2
ATT dyn Attenuator range with 3bit
Is
Small signal gain @ Attenuator state 0dB &
switch OFF (1)
P1dB
Psat
Output power at 1dB compression @ Attenuator
state 0dB (1)
18
20
dBm
dBm
Saturated Output power @ Attenuator state 0dB
(1)
NF
Noise figure @ Attenuator state 0dB
Input Return Loss all attenuator states
12
-15
-15
dB
dB
dB
RL_IN
-9
-9
RL_OUT Output Return Loss all attenuator states & switch
ON
Vd
Id
4.5
V
mA
V
Drain bias DC voltage (Pads B, D, F)
Bias current @ small signal
300
350
0
Vc
Control voltage for Attenuator bits & SPST switch
-5
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Ref. : DSCHA3513-8144 - 23 May 08
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
