6-18GHz Digital Variable Amplifier
CHA3511
Electrical Characteristics on wafer
Tamb = +25°C
Vd (Pads D & B)= 4.5V, Vg (Pads A & C) tuned for Id= 190mA
Configuration Gain:E2=-5V; F=0V
Configuration isolation: E2=0V; F=-5V
Symbol
Fop
Parameter
Min
Typ
Max
Unit
6
18
GHz
Operating frequency range (1)
G
16
dB
dB
Small signal gain @ Config Gain
ISO
P1dB
Psat
Delta Gain between config Gain & config.
Isolation
Output power at 1dB compression @ Config.
Gain
35
18
39
20
dBm
dBm
20
22
Saturated Output power @ config. gain
Noise figure @ Config. Gain
6-12 GHz
12-18 GHz
6
8
dB
dB
NF
8
10
VSWRin
2.3:1
2.0:1
4.5
Input VSWR @Config gain
VSWRout
Output VSWR @Config. gain
Drain bias DC voltage (Pads D,B)
Bias current @ small signal
Control voltage for Attenuator bits
Vd
Id
V
mA
V
190
-5/0
250
Vc
Ref. : DSCHA35116286 - 13 Oct 06
2/10
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
