20-40GHz Medium Power Amplifier
CHA3093c
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 3.5V Id=330mA
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
20
40
GHz
G
G
Small signal gain [ 20GHz to 35GHz](1)
Small signal gain (1)
20
18
22
dB
dB
Small signal gain flatness (1) (Any 1GHz BW)
Reverse isolation (1)
±0.5
50
dB
∆G
Is
dB
P1dB
P3dB
Pulsed output power at 1dB gain compression (1)
Pulsed output power at 3dB gain compression (1)
18
20
20
dBm
dBm
22
IP3
PAE
3rd order intercept point
Power added efficiency at saturation
Input VSWR (1)
29
10
dBm
%
VSWRin
1.2:1
2.0:1
8.0
2.0:1
3.0:1
10.0
VSWRout Output VSWR (1)
NF
Noise figure
dB
Vdet
Detected voltage : at 25GHz @ Pout=20dBm (2)
Detected voltage : at 38GHz @ Pout=20dBm (2)
0.65
0.45
V
V
Id
Bias current (small signal)
330
400
mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports.
(2) In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less.
(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.
Absolute Maximum Ratings (1)
Symbol
Parameter
Drain bias voltage_small signal (2)
Drain bias current_small signal
Gate bias voltage
Values
4.0
Unit
V
Vds
Ids
470
mA
V
Vgs
-2 to +0.4
+5
Vdg
Drain Gate voltage (Vds – Vgs)
Maximum continuous input power (2)
V
Pin
+4 (@ 20GHz)
dBm
dBm
-1 (@ 40GHz)
+15
Maximum peak input power overdrive (3)
Operating temperature range
Ta
-40 to +85
°C
°C
Tstg
Storage temperature range
-55 to +125
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA30932158 -07-June-02
2/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
