17-24GHz LNA VGA
CHA2292
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd2,3,4=5V
Symbol
Parameter
Operating frequency range
Min
Typ
Max Unit
Fop
16
24
GHz
dB
G
∆G
Small signal gain (1)
24
26
±1
Small signal gain flatness (1)
Reverse isolation (1)
dB
Is
50
dB
NF
Noise figure with Vc=1.2V
2.8
20
3.5
dB
Gctrl
P1dB
Gain control range versus Vc
Output power at 1dB compression with Vc=1.2V
15
dB
11
dBm
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
2.5:1
2.0:1
5
3.5:1
3:1
Vd
DC voltage
V5= Vd2,3,4
Vc
V
V
-1.5
[-0.7, +1.2] +1.3
Id1
Id
Bias current (2) with Vc=1.2V
35
mA
mA
Bias current total (3) with Vc=1.2V
160
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjusted to 35mA with Vg1 voltage.
(3) With Id1=35mA, adjust Vg2,3,4 voltage for a total drain current around 160mA.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Values
5.5
Unit
V
Drain bias voltage
Vc
Control bias voltage
1.5
V
Id
Drain bias current
250
mA
V
Vg
Gate bias voltage
-2.0 to +0.4
+15
Pin
Ta
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
dBm
°C
-40 to +85
-55 to +155
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA22927150 - 20 May 07
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
