55-65GHz Low Noise Amplifier
CHA2159
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
55
65
GHz
G
∆G
Is
Small signal gain (1)
18
40
13
20
±1.0
50
dB
dB
Small signal gain flatness (1)
Reverse isolation (1)
dB
NF
Noise figure
4.0
4.8
dB
P1dB
CW output power at 1dB compression (1)
14
dBm
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
2.5:1
2.0:1
115
3.5
4.0:1
2.5:1
130
Id
Bias current
DC Voltage
mA
V
Vd
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb = +25°C (1)
Symbol
Vd
Parameter
Drain bias voltage
Values
4.0
Unit
V
Id
Drain bias current in linear condition
Gate bias voltage
150
mA
V
Vg
-2.0 to +0.4
0
Pin
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
dBm
°C
Ta
-40 to +85
-55 to +125
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA21597262 - 19 Sep 07
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
