36-40GHz Low Noise Amplifier
CHA2095a
Electrical Characteristics
Tamb = +25°C, Vd= 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
Small signal gain (1)
36
40
GHz
G
DG
22
26
dB
dB
Small signal gain flatness (1)
Gain ripple over 40MHz ( within -30 ; +75°C )
Reverse isolation (1)
±1.0
0.5
dBpp
dB
DGsb
Is
35
8
40
10
P1dB
Output power at 1dB gain compression
dBm
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
2.5:1
2.5:1
3.5
3.0:1
3.0:1
4.0
NF
Noise figure (2)
DC Voltage
dB
Vdc
Vd
Vg
3.5
4
+0.4
V
V
-2
Id
Bias current (2)
90
140
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2
voltage for optimum noise figure and Vg3,4 adjusting for maximum gain.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Values
4.0
Unit
V
Drain bias voltage
Gate bias voltage
Drain bias current
Vg
-2.0 to +0.4
200
V
Id
mA
dBm
°C
Pin
Maximum peak input power overdrive (2)
Operating temperature range
+15
Ta
-40 to +85
-55 to +155
Tstg
Storage temperature range
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20958147
Specifications subject to change without notice
2/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
