17-24GHz Low Noise Amplifier
CHA2090
Main Characteristics
Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND
Symbol
Fop
Parameter
Operating frequency range
Noise figure (1)
Min
Typ
Max
24
3
Unit
GHz
dB
17
NF
2
G
Gain (1)
19
23
dB
Pout
Pout -1dB gain compression
10
dBm
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
2.0:1
2.0:1
4.5
2.5:1
2.5:1
5.0
Vdd
Positive Drain voltage (2)
V
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports. When the chip is attached with typical 0.15nH input and output bonding wires, the
indicated parameter values should be improved.
(2) See chip biasing option page 7/8.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Vd
Parameter
Drain bias voltage (3)
Values
5.5
Unit
V
Pin
Maximum peak input power overdrive (2)
Operating temperature range
+15
dBm
°C
Top
-40 to +85
-55 to +125
Tstg
Storage temperature range
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
(3) See chip biasing option page 7/8.
Ref. : DSCHA20909347 – 13 Dec. 99
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
