18-31GHz Low Noise Amplifier
CHA2069
Electrical Characteristics
Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
18
31
Ghz
G
Gain (1)
18
22
± 1
dB
dB
dB
Gain flatness (1)
Noise figure (1)
DG
NF
± 1.5
3.5
2.5
2.0:1
2:0:1
20
VSWRin Input VSWR (1)
VSWRout Ouput VSWR (1)
2.5:1
2.5:1
IP3
P1dB
Id
3rd order intercept point
dBm
dBm
mA
Output power at 1dB gain compression
10
Drain bias current (2)
55
75
(1) These values are representative on-wafer measurements that are made without bonding wires
at the RF ports.
(2) This current is the typical value from the low noise low consumption biasing ( B & D & E
grounded ).
Absolute Maximum Ratings (3)
Tamb = +25°C
Symbol
Vd
Parameter
Drain bias voltage (5)
Values
5.0
Unit
V
Pin
Maximum peak input power overdrive (4)
Operating temperature range
+15
dBm
°C
Top
-40 to +85
Tstg
Storage temperature range
-55 to +125
°C
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options pp7
Ref. :DSCHA20699273 - 8-Sep-99
Specifications subject to change without notice
2/8
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UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
