SMD Type
Transistors
Product specification
2SD2359
Features
Low collector-emitter saturation voltage V
CE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
20
20
5
1.2
1
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
Testconditons
V
CB
= 14 V, I
E
= 0
I
C
= 10 ìA, I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10 ìA, I
C
= 0
V
CE
= 2 V, I
C
= 100 mA
20
20
5
200
0.11
100
23
800
0.2
V
MHz
pF
Min
Typ
Max
1
Unit
ìA
V
V
V
V
CE(sat)
I
C
= 500 mA, I
B
= 10 mA
f
T
Cob
V
CB
= 6 V, I
E
= -50 mA, f = 200 MHz
V
CB
= 6 V, I
E
= 0, f = 1 MHz
Marking
Marking
1O
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
