SMD Type
Transistors
IC
Product specification
2SD2318
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
Features
High DC current gain.
Low saturation voltage.
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
Tc = 25
Junction temperature
Storage temperature
* Pw=100ms.
Tj
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
80
60
6
3
4.5
4.5
1
15
150
-55 to +150
Unit
V
V
V
A
A(Pulse)*
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=80V
V
EB
=6V
Testconditons
Min
80
60
6
100
100
1.0
1.5
560
50
60
1800
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
V
CE(sat)
I
C
=2 A, I
B
=0.05A
V
BE(sat)
I
C
=2 A, I
B
=0.05A
h
FE
f
T
C
ob
V
CE
=4V, I
C
=0.5A
V
CE
=5V, I
E
= -0.2A, f=10MHz
V
CB
=10V, I
E
=0A, f=1MHz
h
FE
Classification
Rank
hFE
U
560 1200
V
820 1800
3
.8
0
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