SMD Type
Transistors
IC
Product specification
2SD2228
Features
High dc current.
Low collector saturation voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
T
T
j
T
stg
Rating
25
16
6
500
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base to emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 16 V, I
E
= 0
V
EB
= 6.0 V, I
C
= 0
V
CE
= 1.0 V, I
C
= 100 mA
100
200
45
200
600
50
15
650
Min
Typ
Max
100
100
600
100
300
700
mV
mV
mV
MHz
pF
Unit
nA
nA
V
CE(sat) 1
I
C
= 100 mA, I
B
= 10 mA
V
CE(sat) 2
I
C
= 500 mA, I
B
= 20 mA
V
BE
f
T
C
ob
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 3.0 V, I
E
= -100 mA
V
CB
= 10 V, I
E
= 0 , f = 1.0 MHz
h
FE
Classification
Marking
hFE
D42
110 240
D43
190 320
D44
270 400
D45
350 600
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