SSMMDD TTyyppee
TransistIoCrs
Product specification
2SD2198
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
IcBO
Testconditons
VCB = 40V , IE = 0
Min
Typ
Max
0.1
Unit
mA
mA
IEBO
VEB = 4V , IC = 0
0.1
VCE = 2V , IC = 1A
VCE = 2V , IC = 3A
VCE = 5V , IC = 1A
VCB = 10V , f = 1MHz
70
30
280
DC current Gain
hFE
Gain bandwidth product
fT
30
MHz
pF
V
Output capacitance
Cob
100
Collector-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 3A , IB = 0.3A
V(BR)CBO IC = 1mA , IE = 0
0.4
60
50
6
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 1mA , IC = 0
V
Turn-on time
Storage time
Fall time
ton
0.1
1.4
0.2
ìs
ìs
ìs
tstg
tf
hFE Classification
Rank
hFE
Q
R
S
70 140
100 200
140 280
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TYSEMI [ TY Semiconductor Co., Ltd ]
