SMD Type
Transistors
IC
Product specification
2SD2115S
TO-252
Unit: mm
+0.1
2.30
-0.1
Features
Low frequency power amplifier.
+0.15
1.50
-0.15
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
T
stg
Rating
150
60
5
2
2.5
18
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Fall time
Symbol
Testconditons
Min
150
60
5
10
150
0.8
1.3
0.6
V
V
ìs
Typ
Max
Unit
V
V
V
ìA
V
(BR)CBO
I
C
= 1 mA, I
E
= 0
V
(BR)CEO
I
C
= 10 mA, R
BE
=
V
(BR)EBO
I
E
= 1 mA, I
C
= 0
I
CBO
h
FE
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V,I
C
= 1.5 A
V
CE(sat)
I
C
= 1.5 A,I
B
= 0.05 A
V
BE(sat)
I
C
= 1.5 A,I
B
= 0.05 A
t
f
I
C
= 1.5 A,I
B
= -I
B2
=50 mA
3
.8
0
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