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Product specification
2SD1628
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
IEBO
hFE
Testconditons
VCB = 50 V, IE=0
Min
120
Typ
Max
100
100
560
Unit
nA
Collector cutoff current
Emitter cutoff current
VEB = 5 V, IC=0
nA
DC current gain
VCE = 2 V , IC = 0.5 A
VCE = 10 V , IC = 50 mA
VCB = 10 V , f = 1.0MHz
Gain bandwidth product
fT
120
45
MHz
pF
mV
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 3 A , IB = 60 mA
VBE(sat) IC = 3 A , IB = 60 mA
V(BR)CBO IC = 10ìA , IE = 0
500
1.5
60
20
6
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
V
Turn-on timie
Storage time
Turn-off time
ton
30
300
40
ns
ns
ns
tstg
tf
hFE Classification
DK
Marking
Rank
E
F
G
hFE
120 200
160 320
280 560
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4008-318-123
TYSEMI [ TY Semiconductor Co., Ltd ]
