SMD Type
Transistors
Product specification
2SD1623
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates
higher-density mounting, thus allows the applied
hybrid IC’ further miniaturization.
s
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
* Mounted on ceramic board(250mm2X0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C *
T
j
T
stg
Rating
60
50
6
2
4
0.5
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
W
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