SMD Type
Transistors
Product specification
2SD1584-Z
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
Features
Low V
CE(sat)
.
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *1
Total power dissipation Ta = 25 *2
Junction temperature
Storage temperature
* 1Pulse Test PW
10ms, Duty Cycle
50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
60
60
7
3
5
2
150
-55 to +150
Unit
V
V
V
A
A
W
*2 when mounted on ceramic substrate of 7.5cm
2
X0.7mm
3
.8
0
High hFE.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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