SMD Type
Transistors
Product specification
2SD1419
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Testconditons
IC = 10 ìA, IE = 0
Min
120
100
5
Typ
Max
Unit
V
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
V
IC = 1 mA, RBE =
IE= 10 ìA, IC = 0
V
VCB = 100 V, IE = 0
10
ìA
VCE = 5 V, IC = 150 mA*
VCE = 5 V, IC = 500 mA*
IC = 500 mA, IB = 50 mA*
VCE = 5 V, IC = 150 mA*
VCE = 5 V, IC = 150 mA*
VCB = 10 V, IE = 0, f = 1 MHz
60
30
200
DC current transfer ratio
hFE
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
*Pulse test
VCE(sat)
VBE
fT
1
V
V
1.5
140
12
MHz
pF
Cob
hFE Classification
Marking
hFE
DD
DE
60 120
100 200
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