SMD Type
Product specification
2SD1280
Features
Low collector-emitter saturation voltage V
CE(sat).
Satisfactory operation performances at high efficiency
with the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
20
20
5
1
2
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
I
CBO
h
FE
Testconditons
I
C
= 1 mA, I
B
= 0
I
E
= 10 ìA, I
C
= 0
V
CB
= 10 V, I
B
= 0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 1.5 A
V
CE(sat)
I
C
= 1 A, I
B
= 50 mA
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA
f
T
C
ob
V
CB
= 6 V, I
E
= -50 mA, f = 200 MHz
V
CB
= 6 V, I
E
= 0, f = 1 MHz
150
18
90
50
0.5
1.2
V
V
MHz
pF
Min
20
5
1
280
Typ
Max
Unit
V
V
ìA
h
FE
Classification
Marking
Rank
h
FE
Q
90 155
R
R
130 210
S
180 280
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TYSEMI [ TY Semiconductor Co., Ltd ]
