SMD Type
Transistors
Product specification
2SD1257,2SD1257A
Electrical Characteristics Ta = 25
Parameter
Symbol
VCEO
Testconditons
IC = 10 mA, IB = 0
Min
80
Typ
Max
Unit
V
Collector-emitter voltage
2SD1257
2SD1257A
100
V
Collector-base cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
ICBO
IEBO
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
10
50
ìA
ìA
VCE = 2 V, IC = 3 A
VCE = 2 V, IC = 0.1A
90
45
260
hFE
VCE(sat) IC = 5 A, IB = 0.25 A
VBE(sat) IC = 5 A, IB = 0.25 A
0.5
1.5
V
V
fT
ton
tstg
tf
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
0.5
1.5
0.1
MHz
ìs
Turn-on time
IC=3A
Storage time
IB1=-IB2=0.3 A
VCC=50V
ìs
Fall time
ìs
hFE Classification
Rank
hFE
Q
P
90 180
130 260
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TYSEMI [ TY Semiconductor Co., Ltd ]
