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Product specification
2SD1251,2SD1251A
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
VCB = 20 V, IE = 0
VEB = 8 V, IC = 0
Min
Typ
Max
30
1
Unit
ìA
Collector-base cutoff current
Emitter-base cutoff current
IEBO
mA
Collector to emitter voltage
2SD1251
60
80
30
40
VCEO(sus) IC = 0.25 A, L = 25 mH
2SD1251A
Forward current transfer ratio
Forward current transfer ratio
Base-emitter voltage
VCE = 3 V, IC = 1 A
hFE
VCE = 3 V, IC = 0.1 A
160
VBE
VCE(sat) IC = 2 A, IB = 0.4 A
fT VCE = 10 V, IC = 0.2 A, f = 0.5 MHz
VCE = 3 V, IC = 1 A
1.2
1
V
V
Collector-emitter saturation voltage
Transition frequency
1
MHz
hFE Classification
Rank
hFE
Q
P
O
30 60
50 100
80 160
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TYSEMI [ TY Semiconductor Co., Ltd ]
