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2SD1249A 参数 Datasheet PDF下载

2SD1249A图片预览
型号: 2SD1249A
PDF下载: 下载PDF文件 查看货源
内容描述: 高集电极 - 基极电压(发射极开路) VCBO [High collector-base voltage (Emitter open) VCBO]
分类和应用: 晶体晶体管放大器
文件页数/大小: 2 页 / 92 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SD1249A的Datasheet PDF文件第1页  
Transistors  
Product specification  
2SD1249, 2SD1249A  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VCEO  
Testconditons  
IC = 30 mA, IB = 0  
Min  
250  
300  
Typ  
Max  
Unit  
V
Collector-emitter voltage  
(Base open)  
2SD1249  
2SD1249A  
2SD1249  
V
Collector-emitter cutoff  
current (E-B short)  
Collector-emitter cutoff  
current (Base open)  
VCE = 350 V,VBE = 0  
VCE = 400 V,VBE = 0  
VCE = 150 V,IB = 0  
VCE = 200 V,IB = 0  
VEB = 5 V,IC = 0  
1
1
mA  
mA  
mA  
mA  
mA  
ICES  
2SD1249A  
2SD1249  
1
ICEO  
2SD1249A  
1
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IEBO  
hFE  
1
VCE = 10 V, IC = 0.3 A  
VCE = 10 V, IC = 1 A  
VCE = 10 V,IC = 1 A  
IC = 1 A, IB = 0.2 A  
VCE = 10 V, IC = 0.2 A, f = 10 MHz  
IC = 1 A  
40  
10  
250  
Base-emitter voltage  
Collector-emitter saturation voltage  
Transition frequency  
Turn-on time  
VBE  
VCE(sat)  
fT  
1.5  
1.0  
V
V
30  
0.5  
2.0  
0.5  
MHz  
ìs  
ton  
Strage time  
tstg  
IB1 = 0.1 A, IB2 = ? 0.1 A  
VCC = 50 V  
ìs  
Fall time  
tf  
ìs  
hFE Classification  
Rank  
hFE  
R
Q
P
40 to 90  
70 to 150  
120 to 250  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123