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2SC5069 参数 Datasheet PDF下载

2SC5069图片预览
型号: 2SC5069
PDF下载: 下载PDF文件 查看货源
内容描述: 高电流容量。通过MBIT过程。高直流电流增益。 [High current capacity. Adoption of MBIT process. High DC current gain.]
分类和应用:
文件页数/大小: 2 页 / 291 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SC5069的Datasheet PDF文件第1页  
TransistIoCrs  
Product specification  
2SC5069  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
Testconditons  
VCB = 20 V, IE=0  
Min  
Typ  
Max  
100  
100  
Unit  
ìA  
IEBO  
VEB = 10 V, IC=0  
ìA  
VCE = 5 V , IC = 500 mA  
VCE = 5 V , IC = 1A  
800 1500 3200  
DC current gain  
hFE  
600  
260  
27  
Gain bandwidth product  
fT  
VCE = 10 V , IC = 50 mA  
VCB = 10V , f = 1.0MHz  
MHz  
pF  
V
Output capacitance  
Cob  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
VCE(sat) IC = 1A , IB = 20 mA  
VBE(sat) IC = 1A , IB = 20 mA  
V(BR)CBO IC = 10ìA , IE = 0  
0.15  
0.85  
0.5  
1.2  
V
30  
25  
15  
V
V(BR)CEO  
V
IC = 1mA , RBE =  
V(BR)EBO IE = 10ìA , IC = 0  
V
Turn-ON Time  
Strange Time  
Fall Time  
ton  
0.14  
1.35  
0.1  
ìs  
ìs  
ìs  
tstg  
tf  
Marking  
Marking  
CU  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
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