欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC4695 参数 Datasheet PDF下载

2SC4695图片预览
型号: 2SC4695
PDF下载: 下载PDF文件 查看货源
内容描述: 采用FBET过程。小通阻抗[罗恩= 1W ( IB = 5毫安)。 [Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].]
分类和应用:
文件页数/大小: 2 页 / 196 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SC4695的Datasheet PDF文件第1页  
IC  
Product specification  
2SC4695  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
IEBO  
hFE  
Testconditons  
VCB = 40V, IE=0  
Min  
300  
Typ  
Max  
0.1  
Unit  
ìA  
Collector cutoff current  
Emitter cutoff current  
VEB = 20V, IC=0  
0.1  
ìA  
DC current gain  
VCE = 5V , IC = 10mA  
VCE = 10V , IC = 10mA  
VCB = 10V , f = 1.0MHz  
1200  
Gain bandwidth product  
fT  
250  
3.6  
MHz  
pF  
V
Output capacitance  
Cob  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
VCE(sat) IC = 100mA , IB = 2mA  
VBE(sat) IC = 100mV , IB = 2mA  
V(BR)CBO IC = 10ìA , IE = 0  
0.12  
0.85  
0.5  
1.2  
V
50  
20  
25  
V
V(BR)CEO  
V
IC = 1mA , RBE =  
V(BR)EBO IE = 10ìA , IC = 0  
V
Turn-on time  
Storage time  
Fall time  
ton  
135  
450  
100  
ns  
ns  
ns  
tstg  
tf  
Marking  
Marking  
WT  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123