SSMMDD TTyyppee
Transistors
Product specification
2SC4600
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Symbol
ICBO
Testconditons
VCB = 500 V, IE = 0
Min
Typ
Max
10
Unit
ìA
IEBO
VEB = 5 V, IC = 0
10
ìA
VCE = 5 V, IC = 0.6A
VCE = 5 V, IC = 3A
VCE = 10 V, IC =0.6A
VCB=10V,f=1MHz
IC = 3 A, IB = 0.6 A
IC =3 A, IB = 0.6 A
15
8
50
DC current gain
hFE
Gain-Bandwidth product
fT
18
80
MHz
pF
V
Output Capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-to-Base Breakdown Voltage
VCE (sat)
VBE (sat)
1.0
1.5
V
V (BR) CBO IC = 1 mA, IE = 0
800
500
7
V
V (BR) CEO
V(BR)EBO
V
IC = 5 mA,RBE=
IE=1mA,IC=0
V
VCEO(SUS) IC=5A,IB1=1A,L=50ìH
VCEX(SUS) IC=2.5A,IB1=-IB2=1A,L=1mH
ton
500
500
V
Collector-to-Emitter Sustain Voltage
Turn-ON time
Storage time
Fall time
0.5
3.0
0.3
IC=4A,IB1=0.8A,IB2=-1.6A,RL=50
ìs
tstg
Ù,VCC=200V
tf
Switching Time Test Circuit
hFE Classification
Rank
hFE
L
M
N
15 to 30
20 to 40
30 to 50
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4008-318-123
TYSEMI [ TY Semiconductor Co., Ltd ]
