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TransistIoCrs
Product specification
2SC4523
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Testconditons
VCB = 45V, IE=0
Min
Typ
Max
1
Unit
ìA
IEBO
VEB = 2V, IC=0
10
ìA
VCE = 2V , IC = 500mA
VCE = 2V , IC = 8A
100
40
400
DC current gain
hFE
Gain bandwidth product
fT
VCE = 2V , IC = 500mA
VCB = 10V , f = 1.0MHz
250
65
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 4A , IB = 200mA
VBE(sat) IC = 4A , IB = 200mA
V(BR)CBO IC = 100ìA , IE = 0
0.25
0.95
0.7
1.3
V
60
45
5
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 100ìA , IC = 0
V
Turn-on time
Storage time
Fall time
ton
50
100
270
350
ns
ns
ns
tstg
150
180
tf
hFE Classification
Rank
hFE
R
S
T
100 200
140 280
200 400
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4008-318-123
TYSEMI [ TY Semiconductor Co., Ltd ]
