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2SC4499S 参数 Datasheet PDF下载

2SC4499S图片预览
型号: 2SC4499S
PDF下载: 下载PDF文件 查看货源
内容描述: 高速,高电压开关集电极到基极电压VCBO 500 V [High speed and high voltage switching Collector to base voltage VCBO 500 V]
分类和应用: 晶体开关晶体管
文件页数/大小: 1 页 / 76 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
SMD Type
Transistors
Product specification
2SC4499S
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
Features
High speed and high voltage switching
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
TC=25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
Rating
500
400
10
0.5
1
0.75
10
150
-55 to +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector to emitter sustain voltage
Emitter to base breakdown voltage
Collector cutoff current
Symbol
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn on time
Storage time
Fall time
* 1 Pulse test.
h
FE
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
Testconditons
I
C
= 0.1 A, R
BE
=
I
E
= 10 mA, I
C
= 0
V
CB
= 400 V, I
E
= 0
V
CE
= 350 V, R
BE
=
V
CE
= 5 V, I
C
= 0.25 A*1
V
CE
= 5 V, I
C
= 0.5 A*1
I
C
= 0.25 A, I
B
= 0.05 A*1
I
C
= 0.25 A, I
B
= 0.05 A*1
I
C
= 0.5 A, I
B1
= -I
B2
= 0.1 A,
V
CC
= 150 V
12
5
1.0
1.5
1.0
2
1.0
V
V
ìs
ìs
ìs
,L = 100 mH
Min
400
10
20
50
Typ
Max
Unit
V
V
ìA
3
.8
0
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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