SMD Type
TransistIoCrs
Product specification
2SC4446
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
IEBO
hFE
Testconditons
VCB = 40V, IE=0
Min
135
Typ
Max
0.1
Unit
ìA
Collector cutoff current
Emitter cutoff current
VEB = 10V, IC=0
0.1
ìA
DC current gain
VCE = 6V , IC = 1mA
VCE = 6V , IC = 1mA
600
Gain bandwidth product
fT
130
0.15
0.85
MHz
V
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Output capacitance
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
V(BR)CBO IC = 10ìA , IE = 0
0.5
1.2
V
60
50
15
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
V
Cob
ton
VCB = 6V, f = 1MHz
2.2
50
pF
Turn-on time
Storage time
Fall time
ns
ns
ns
tstg
tf
590
110
hFE Classification
H
Marking
Rank
5
6
7
hFE
135 270
200 400
300 600
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TYSEMI [ TY Semiconductor Co., Ltd ]
