SMD Type
Transistors
Product specification
2SC4412
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
High breakdown voltage.
Small reverse transfer capacitance and excellent high
frequency characteristic(Cre : 1.0pF typ).
Excellent DC current gain ratio(hFE ratio : 0.95 typ).
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
300
300
5
50
100
250
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Reverse transfer capacitance
DC current gain ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Ic
BO
I
EBO
h
FE
f
T
C
ob
C
re
h
FE
ratio
Testconditons
V
CB
= 200V , I
E
= 0
V
EB
= 4V , I
C
= 0
V
CE
= 6V , I
C
= 0.1 mA
V
CE
= 6V , I
C
=1 mA
V
CE
= 30V , I
C
= 10 mA
V
CB
= 30V , f = 1MHz
V
CB
= 30V , f = 1MHz
h
FE
1/ h
FE
2
100
100
70
1.5
1.0
0.95
1.0
1.0
300
300
5
V
V
V
V
V
MHz
pF
pF
Min
Typ
Max
0.1
0.1
320
Unit
ìA
ìA
V
CE(sat)
I
C
= 10mA , I
B
= 1mA
V
BE(sat)
I
C
= 10mA , I
B
= 1mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
h
FE
Classification
Marking
Rank
hFE
4
100 200
QT
5
160 320
+0.1
0.38
-0.1
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
