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2SC4390 参数 Datasheet PDF下载

2SC4390图片预览
型号: 2SC4390
PDF下载: 下载PDF文件 查看货源
内容描述: 通过MBIT过程。高直流电流增益(HFE = 800〜 3200 ) 。 [Adoption of MBIT process. High DC current gain (hFE=800 to 3200).]
分类和应用:
文件页数/大小: 2 页 / 199 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SC4390的Datasheet PDF文件第1页  
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Product specification  
2SC4390  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
IEBO  
hFE  
Testconditons  
VCB = 15V, IE=0  
Min  
Typ  
Max  
0.1  
Unit  
ìA  
Collector cutoff current  
Emitter cutoff current  
VEB = 10V, IC=0  
0.1  
ìA  
DC current gain  
VCE =2V , IC = 500mA  
VCE = 10V , IC = 50mA  
VCB = 10V , f = 1.0MHz  
800 1500 3200  
Gain bandwidth product  
fT  
260  
280  
MHz  
pF  
V
Output capacitance  
Cob  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
VCE(sat) IC = 1 A , IB = 20mA  
VBE(sat) IC = 1 A , IB = 20mA  
V(BR)CBO IC = 10ìA , IE = 0  
0.11  
0.87  
0.5  
1.2  
V
20  
10  
15  
V
V(BR)CEO  
V
IC = 1mA , RBE =  
V(BR)EBO IE = 10ìA , IC = 0  
V
Turn-on time  
Storage time  
Fall time  
ton  
0.13  
0.8  
ìs  
ìs  
ìs  
tstg  
tf  
0.1  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
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