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Product specification
2SC4332-Z
Electrical Characteristics Ta = 25
Parameter
Symbol
VCEO(SUS)
Testconditons
Min
60
Typ
Max
Unit
V
Collector to Emitter Voltage
IC = 3.0 A, IB = 0.3 A, L = 1 mH
IC = 3.0 A, IB1 = -IB2 = 0.3 A,VBE(OFF) = -1.5
V, L = 180 ìH,
Collector to Emitter Voltage
VCEX(SUS)
60
V
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
ICER
VCE = 60 V, IE = 0
10
1.0
10
ìA
mA
ìA
VCE = 60 V, RBE = 51Ù, TA = 125°C
VCE = 60 V, VBE(OFF) = -1.5 V
VCE = 60 V, VBE(OFF) = -1.5 V,TA = 125
VEB = 5.0 V, IC = 0
ICEX1
ICEX2
IEBO
1.0
10
mA
ìA
hFE1
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 3.0 A
IC = 3.0 A, IB = 0.15 A
100
100
60
DC Current Gain
hFE2
400
DC Current Gain
hFE3
Collector Saturation Voltage
Collector Saturation Voltage
Base Saturation Voltage
Base Saturation Voltage
Collector Capacitance
Gain Bandwidth Product
Turn-on Time
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Cob
0.3
0.5
1.2
1.5
V
V
IC = 4.0 A, IB = 0.2 A
IC = 3.0 A, IB = 0.15 A
V
IC = 4.0 A, IB = 0.2 A
V
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IE = -0.5 A
IC = 3.0 A, RL = 16.7Ù,
IB1 = -IB2 = 0.15 A, VCC =50 V
130
150
pF
MHz
ìs
ìs
ìs
fT
ton
0.3
1.5
0.3
Storage Time
tstg
Fall Time
tf
hFE Classification
Marking
hFE
M
L
K
100 200
150 300
200 400
http://www.twtysemi.com
sales@twtysemi.com
2 of 2
4008-318-123
TYSEMI [ TY Semiconductor Co., Ltd ]
