Product specification
2SC4115
Features
Low V
CE(sat)
:V
CE(sat)
= 0.2V (Typ.)
I
C
/ I
B
= 2A / 0.1A
NPN silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
CollectorPower Dissipation
Junotion Temperature
storage Temperature
*1 Single pulse pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*1
P
C
T
J
T
stg
Rating
40
20
6
3
5
0.3
150
-55 to 150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter outoff current
Collector emitter saturation voltage
DC current gain
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
C
ob
f
T
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=30V
V
EB
=5V
I
C
/I
B
=2A/0.1A
V
CE
=2V,I
C
=0.1A
V
CB
=10V,I
E
=0A,f=1MHz
V
CE
=2V.I
E
=0.5A,f=100MHz
120
25
290
0.2
Testconditons
Min
40
20
6
0.1
0.1
0.5
560
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
h
FE
Classification
Rank
hFE
120
Q
270
180
R
390
270
S
560
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TYSEMI [ TY Semiconductor Co., Ltd ]
