SMD Type
Product specification
2SC3515
Features
High Voltage: V
CBO
= 300V , V
CEO
= 300V
Low Saturation Voltage: V
CE(sat)
= 0.5V (max)
Small Collector Output Capacitance: C
ob
= 3pF(typ.)
P
C
= 1 to 2W (mounted on ceramic substrate)
Small Flat Package
Complementary to 2SA1384
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* mounted on a ceramic substrate (250 mm
2
x 0.8 t)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C *
T
j
T
stg
Rating
300
300
6
100
20
500
1000
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 300V , I
E
= 0
V
EB
= 6V , I
C
= 0
300
300
30
150
0.5
1
50
80
3
4
V
V
MHz
pF
Min
Typ
Max
0.1
0.1
Unit
ìA
ìA
V
V
V
(BR)CBO
I
C
= 0.1mA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , I
B
= 0
h
FE
V
CE
= 10V , I
C
= 20mA
V
CE(sat)
I
C
= 20mA , I
B
= 2mA
V
BE(sat)
I
C
= 20mA , I
B
= 2mA
f
T
C
ob
V
CE
= 10V , I
C
= 20mA
V
CB
= 20V , I
E
= 0 , f = 1MHz
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
