SMD Type
Transistors
IC
Product specification
2SC3099
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
NF=1.7dB,|S
21e
|
2
=15dB(f=500MHz)
NF=2.5dB,|S
21e
|
2
=9.5dB(f=1GHz)
0.55
Low Noise Figure
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
20
20
3
30
15
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Symbol
I
CBO
I
EBO
h
FE
C
ob
Cre
fT
V
CE
= 10 V, I
C
= 10 mA
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
30
0.9
0.6
4.0
15.0
9.5
1.7
2.5
Min
Typ
Max
0.1
1.0
250
pF
pF
GHZ
dB
dB
dB
dB
Unit
ìA
ìA
|S
21e
|
2
(1) V
CE
= 10 V, I
C
= 10mA,f=500MHz
|S
21e
|
2
(2) V
CE
= 10 V, I
C
= 10 mA,f=1GHz
Noise Figure
NF(1)
NF(2)
V
CB
=10V, I
C
=3 mA, f=500MHz
V
CB
=10V, I
C
=3 mA, f=1GHz
Marking
Marking
MC
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
