SMD Type
Transistors
IC
Product specification
2SC3098
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Low Noise Figure
NF=2.5dB,|S
21e
|
2
=14.5dB(f=500MHz)
NF=3.0dB,|S
21e
| =9.0dB(f=1GHz)
2
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
30
20
3
50
25
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Symbol
I
CBO
I
EBO
h
FE
C
ob
Cre
fT
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 10 V, I
C
= 10 mA
30
80
1.15
0.75
3.5
14.5
9
2.5
3
Min
Typ
Max
1
1
300
pF
pF
GHz
dB
dB
dB
dB
Unit
ìA
ìA
|S
21e
|
2
(1) V
CE
= 10 V, I
C
= 10 mA,f=500MHz
S
21e
|
2
(2) V
CE
= 10 V, I
C
= 10 mA,f=1GHz
Noise Figure
NF(1)
NF(2)
V
CB
=10V, I
C
=5 mA, f=500MHz
V
CB
=10V, I
C
=5 mA, f=1GHz
Marking
Marking
MB
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1