SMD Type
Transistors
Product specification
2SC3076
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
VCB = 50 V, IE = 0
VEB = 5 V, IC = 0
Min
Typ Max Unit
Collector cut-off current
Emitter cut-off current
1.0
1.0
ìA
ìA
V
IEBO
Collector-emitter breakdown voltage
V(BR)CEO IC = 10 mA, IB = 0
50
70
40
VCE = 2 V, IC = 0.5 A
hFE
VCE = 2 V, IC = 1.5A
240
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
VCE (sat) IC = 1A, IB = 0.05A
VBE (sat) IC = 1A, IB = 0.05A
0.5
1.2
V
V
fT
VCE=2V,IC=0.5A
80
30
MHz
pF
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1 MHz
Switching Time Ture-on Time
switching Time Storage Time
Switching Fall Time
ton
tstg
tf
0.1
1
ìS
ìS
ìS
0.1
hFE Classification
C3076
Marking
Rank
O
Y
hFE
70 140
120 240
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
4008-318-123
TYSEMI [ TY Semiconductor Co., Ltd ]
