Product specification
2SC2712
SOT-23
Unit: mm
Features
High voltage and high current: V
CEO
= 50 V, I
C
= 150 mA (max)
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
1
2
+0.1
0.95
-0.1
+0.1
1.9
-0.1
Low noise: NF = 1dB (typ.), 10dB (max)
0.55
High h
FE
: h
FE
= 70
700
+0.1
1.3
-0.1
Excellent hFE linearity : h
FE
(I
C
= 0.1 mA)/ h
FE
(I
C
= 2 mA)= 0.95 (typ.)
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
60
50
5
150
30
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Noise figure
Transition frequency
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 60 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 6 V, I
C
= 2 mA
70
0.1
2
1
80
Min
Typ
Max
0.1
0.1
700
0.25
3.5
10
V
pF
dB
MHz
Unit
A
A
V
CE (sat)
I
C
= 100 mA, I
B
= 10 mA
C
ob
NF
f
T
V
CB
= 10V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
C
= 0.1 mA , f = 1 KHz,
R
G
=10KÙ
V
CE
= 10V, I
C
=1 mA
h
FE
Classification
Marking
Rank
hFE
70
LO
O
140
120
LY
Y
240
LG
GR
200
400
LL
BL
350
700
+0.1
0.38
-0.1
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 3
TYSEMI [ TY Semiconductor Co., Ltd ]
