SMD Type
Product specification
2SB772
SOT-89
Unit:mm
1.50 ±0.1
■
Features
●
PNP transistor High current output up to 3A
●
Low Saturation Voltage
●
Complement to 2SD882
4.50±0.1
1.80±0.1
1
0.48±0.1
2
3
0.80±0.1
0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50±0.1
4.00±0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
c
T
J
T
stg
Rating
-40
-30
-6
-3
0.5
150
-55 to 150
Unit
V
V
V
A
W
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test Conditons
I
c
=-100uA ,I
E
=0
I
C
= -10 mA , I
B
=0
I
E
= -100 uA ,I
C
=0
V
CB
=-40 V , I
E
=0
V
EB
=-6V , I
C
=0
V
CE
= -2V, I
C
= -1A
V
CE
=-2V, I
C
= -100mA
I
C
=-2A, I
B
=- 0.2A
I
C
=-2A, I
B
= -0.2A
V
CE
=-5 V, I
C
=-0.1mA,f = 10MHz
50
60
32
-0.5
-1.5
V
V
MHz
Min
-40
-30
-6
-1
-1
400
Typ
Max
Unit
V
V
V
μA
μA
■
h
FE
Classification
Rank
h
FE
R
60½120
Q
100½200
P
160½320
E
200½400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 3
TYSEMI [ TY Semiconductor Co., Ltd ]
