Product specification
2SB1572
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Symbol
ICBO
Testconditons
VCB = -80 V, IE = 0
Min
Typ
Max
-100
-100
Unit
nA
IEBO
VEB = -6.0 V, IC = 0
nA
hFE1
hFE2
VBE
VCE = -2.0 V, IC = -0.1 A
VCE = -2.0 V, IC = -1.0 A
VCE = -2.0 V, IC = -0.1 A
80
DC Current Gain *
100
200
400
Base to Emitter Voltage *
Collector Saturation Voltage *
Collector Saturation Voltage *
Base Saturation Voltage *
Gain Bandwidth Product
Output Capacitance
Turn-on Time
-0.63 -0.685 -0.73
V
V
VCE(sat)1 IC = -2.0 A, IB = -0.1 A
VCE(sat)2 IC = -3.0 A, IB = -0.15 A
VBE(sat) IC = -2.0 A, IB = -0.1 A
-0.2
-0.3
-0.89
160
45
-0.4
-0.6
-1.2
V
V
fT
Cob
ton
tstg
tf
VCE = -10 V, IE = 0.3 A
MHz
pF
ns
ns
ns
VCB = -10 V, IE = 0, f = 1.0 MHz
155
510
35
IC = -1.0 A, VCC = -10 V,
Storage Time
RL = 5.0 , IB1 = -IB2 = -0.1 A,
?
Fall Time
* Pulsed: PW
350 ìs, Duty Cycle
2%.
hFE Classification
Marking
hFE
HX
100 200
HY
160 320
HZ
200 400
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
