SMD Type
Transistors
Product specification
2SB1323
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
VCB = 30V , IE = 0
Min
Typ
Max
-1
Unit
ìA
Collector cutoff current
VCE = -2V , IC = -0.5A
VCE = -2V , IC = -2A
VCE = -2V , IC = -0.5A
VCB = -10V , f = 1MHz
70
50
DC current Gain
hFE
Gain bandwidth product
fT
100
55
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter on state voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Base-emitter on state voltage
Diode forward voltage
VCE(sat) IC = -1A , IB = -50mA
VBE(ON) VCE = -2A , IC = -1A
V(BR)CBO IC = -10ìA , IE = 0
-0.18 -0.4
-1
-2
-5
V
-40
-40
-30
V
V(BR)CEO
V(BR)CEO
VF
V
IC = -10ìA , RBE =
IC = -10mA , RBE =
IF=0.5A
V
1.5
V
Base-emitter resistance
RBE
0.8
KÙ
Ù
Base resistance
R1
120
160
200
Marking
Marking
BK
http://www.twtysemi.com
2of 2
sales@twtysemi.com
4008-318-123