Product specification
2SB1216
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Testconditons
VCB = -100V , IE = 0
Min
Typ
Max
-1
Unit
ìA
IEBO
VEB = -4V , IC = 0
-1
ìA
VCE = -5V , IC = -0.5A
VCE = -5V , IC = -3A
VCE = -10V , IC = -0.5A
VCB = -10V , f = 1MHz
70
40
400
DC current Gain
hFE
Gain bandwidth product
fT
130
65
MHz
pF
mV
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
VCE(sat) IC = -2A , IB = -0.2A
VBE(sat) IC = -2A , IB = -0.2A
V(BR)CBO IC = -10ìA , IE = 0
-200 -500
-0.9
-1.2
-120
-100
-6
V
V
IC = -1mA , RBE =
IE = -10ìA , IC = 0
V(BR)CEO
V(BR)EBO
V
Turn-on time
Storage time
Fall time
ton
tstg
tf
100
800
50
ns
ns
ns
hFE Classification
Rank
hFE
Q
R
S
T
70 140
100 200
140 280
200 400
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TYSEMI [ TY Semiconductor Co., Ltd ]
