Product specification
2SB1122
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
IEBO
hFE
Testconditons
VCB = -50V , IE = 0
Min
100
Typ
Max
-100
-100
560
Unit
nA
Collector cutoff current
Emitter cutoff current
VCB = -4V , IE = 0
nA
DC current Gain
VCE = -2V , IC = -100mA
VCE = -10V , IC = -50mA
VCB = -10V , f = 1MHz
Gain bandwidth product
fT
150
12
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
V(BR)CBO IC = -10ìA , IE = 0
-180 -500
-0.9
-1.2
V
-60
-50
-5
V
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
V
Turn-on time
Storage time
Fall time
ton
40
300
30
ns
ns
ns
tstg
tf
hFE Classification
BE
Marking
Rank
hFE
R
S
T
U
100 200
140 280
200 400
280 560
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TYSEMI [ TY Semiconductor Co., Ltd ]
