Product specification
2SB1118
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Testconditons
VCB = -15V , IE = 0
Min
Typ
Max
-0.1
-0.1
560
Unit
ìA
IEBO
VCB = -4V , IE = 0
ìA
VCE = -2V , IC = -50mA
VCE = -2V , IC = -500mA
VCE = -10V , IC = -50mA
IC = -5mA , IB = -0.5mA
IC = -100mA , IB = -10mA
140
60
DC current Gain
hFE
fT
Gain bandwidth product
Collector-emitter saturation voltage
250
-15
-60
-0.8
MHz
V
-35
-120
-1.2
VCE(sat)
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
VBE(sat) IC = -100mA , IB = -10mA
V(BR)CBO IC = -10ìA , IE = 0
V
V
-20
-15
-5
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
Cob VCB = -10V , f = 1MHz
V
13
pF
hFE Classification
BA
Marking
Rank
S
T
U
hFE
140 280
200 400
280 560
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TYSEMI [ TY Semiconductor Co., Ltd ]
