Product specification
2SA733
SOT-23
Features
Collector-Base Voltage: V
CBO
=-60V
+0.1
2.4
-0.1
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector Current (DC)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-60
-50
-5.0
-150
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Noise figure
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
C
ob
NF
f
T
I
C
= -5uA,I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -50uA, I
C
=0
V
CB
= -60 V , I
E
=0
V
EB
= -5 V , I
C
=0
V
CE
= -6 V, I
C
=-1mA
I
C
= -100mA, I
B
=- 10mA
V
CE
=-6V,I
C
=-1.0mA
V
CB
=-10V,I
E
=0,f=1MHZ
V
CE
=-6V,I
C
=-0.3mA,R
g
=10k? ,f=100HZ
V
CE
=-6V,I
C
=-10mA
50
120
-0.18
Testconditons
Min
-60
-50
-5
-0.1
-0.1
475
-0.3
V
V
pF
dB
MHz
Typ
Max
Unit
V
V
V
uA
uA
-0.58 -0.62 -0.68
4.5
6
7
20
Marking
Marking
Range
M6
200-400
CSL
120-220
CSH
220-475
+0.1
0.38
-0.1
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
