SMD Type
Product specification
2SA1729
Features
Adoption of FBET, MBIT Process.
Large Current Capacity.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Small-Sized Package.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm
2
x 0.8 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
*
T
j
T
stg
Rating
-50
-40
-5
-1.5
-3
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Gain-Bandwidth Product
Output Capacitance
Turn-ON Time
Storage Time
Turn-OFF Time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Testconditons
V
CB
= -40V , I
E
= 0
V
EB
= -3V , I
C
= 0
V
CE
= -2V , I
C
= -100mA
V
CE
= -2V , I
C
= -1.5A
I
C
= -800mA , I
B
= -40mA
I
C
= -800mA , I
B
= -40mA
-50
-40
-5
300
18
50
See Test Circuit
120
150
100
220
300
70
25
-0.3
-0.9
-0.8
-1.3
V
V
V
V
V
MHz
pF
ns
ns
ns
Min
Typ
Max
-1
-1
280
Unit
ìA
ìA
V
(BR)CBO
I
C
= -10ìA, I
E
= 0
V
(BR)CEO
I
C
= -1mA, R
BE
=
V
(BR)EBO
I
E
= -10ìA, I
C
= 0
f
T
C
ob
t
on
t
stg
t
off
V
CE
= -2V , I
C
= -100mA
V
CB
= -10V , f = 1MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 3
TYSEMI [ TY Semiconductor Co., Ltd ]
