Product specification
2PB710A
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
IE = 0; VCB = -60 V
Min
Typ
Max
-10
-5
Unit
nA
Collector cut-off current
ìA
nA
IE = 0; VCB = -60 V; Tj = 150
IC = 0; VEB = -5 V
Emitter cut-off current
IEBO
-10
170
240
340
DC current gain
DC current gain
2PB710AQ
2PB710AR
2PB710AS
85
120
170
40
hFE
IC = -150 mA; VCE = -10 V*
IC = -500 mA; VCE = -10 V; *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
VCEsat IC = -300 mA; IB = -30 mA *
VBEsat IC = -300 mA; IB = -30 mA *
-600
-1.5
15
mV
V
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
pF
Transition frequency
2PB710AQ
100
120
140
fT
IC = -50 mA; VCE = -10 V; f = 100 MHz*
MHz
2PB710AR
2PB710AS
*. Pulse test: tp 300 ìs; ä 0.02.
Marking
Type Number
Marking
2PB710AQ
DQ
2PB710AR
DR
2PB710AS
DS
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TYSEMI [ TY Semiconductor Co., Ltd ]
